Articles from ROHM Semiconductor

Delivers an authentic listening experience by expressing the three elements of spatial reverberation, quietness, and dynamic range while preserving the natural “texture” of musical instruments

Price range is less than one-tenth that of conventional devices while achieving remarkable space-savings

125W × 8ch high-power array significantly improves measurement distance and resolution in LiDAR applications

Shipments to European automakers scheduled to begin in 2025

Santa Clara, CA and Kyoto, Japan, Dec. 10, 2024 (GLOBE NEWSWIRE) -- ROHM Co., Ltd. (ROHM) today announced that they have entered into a strategic partnership with TSMC on the development and volume production of gallium nitride (GaN) power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.

Santa Clara, CA and Kyoto, Japan, Dec. 04, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its EcoSiC™ products, including SiC MOSFETs and SiC Schottky barrier diodes (SBDs) in the HFA/HCA series of 3.5kW output AC-DC power supply units for 3-phase applications from COSEL, a leading power supply manufacturer in Japan. Incorporating ROHM’s SiC MOSFETs and SiC SBDs into the forced-air-cooled HFA series and conduction-cooled HCA series achieves up to 94% efficiency. The HCA series has been mass produced since 2023, while the HFA series began mass production in 2024.

Santa Clara, CA and Kyoto, Japan, Nov. 26, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor and Valeo, a leading automotive technology company, today announced they are collaborating to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.

Achieves approximately 1.3 times the creepage distance compared to standard products

Santa Clara, CA and Kyoto, Japan, Oct. 10, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they will participate in electronica 2024, the world’s leading trade fair and conference for electronic components, systems, applications, and solutions. The event will take place November 12 through 15 in Munich, Germany.

AEC-Q101 qualified designs contribute to greater miniaturization and high-efficiency operation

Contributes to higher efficiency in automotive electric compressors and industrial equipment inverters

Santa Clara, CA and Kyoto, Japan, Sept. 05, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor and United Automotive Electronic Systems Co., Ltd. (UAES), a leading Tier 1 automotive supplier in China, today announced they have entered into a long-term supply agreement for SiC power devices.

Supports a wide range of power transistors from Si MOSFETs and IGBTs to SiC MOSFETs, with built-in high accuracy undervoltage prevention malfunction

Integration in traction inverters extends the cruising range and improves performance

Low input offset voltage and noise contribute to higher accuracy in sensor circuits

Provides functions equivalent to a fully digital control power supply with low power consumption

Low temperature dependence, together with wide angle emission and uniform light output, contribute to the evolution of automotive driving assistance technologies

Achieves industry-leading power density by integrating 4th generation SiC MOSFETs in a compact package

Three new models with 5W rated power in ultra-low resistances added to the PMR100 series of metal plate shunt resistors

Contributing to the proliferation of smart vehicle cockpits

Showcasing highly efficient EcoGaN™ and SiC power solutions

Compact size reduces component area by 72%, contributing to smaller power supplies in consumer and industrial equipment

Ultra-low current consumption improves power savings in consumer and industrial equipment

Ensures stable output in automotive applications with high input voltage and significant load jumps

Santa Clara, CA and Kyoto, Japan, Feb. 26, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from Innergie, a brand of Delta. Delta is a global provider of IoT-based Smart Green Solutions headquartered in Taiwan. ROHM’s EcoGaN device contributes to greater application performance, reliability, and miniaturization by providing higher efficiency in power supply systems.

Novel design contributes to greater miniaturization, lighter weight, and improved energy savings

Ideal for automotive LED headlamps and other high-speed switching applications

9µV input offset voltage, 0.05µV/°C temperature drift enable precise control of industrial equipment

Five-model lineup provides low noise features, high-speed switching, and fast reverse recovery time

Optimized hardware configuration and GUI software significantly reduce development load

Marks the world’s first implementation in a large-scale semiconductor manufacturing plant, with full-scale introduction in the EDS process planned for April 2024

Improves design convenience by allowing designers to incorporate power devices in circuit simulations

Achieves a uniform luminous intensity of 97% over the entire luminous width, contributing to higher definition LiDAR

Provides a seamless shopping experience by integrating inventory and shipping services

Class-leading* unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centers

Expanding production capacity for SiC power devices

Achieving the industry’s smallest size in a mass-produced surface mount package contributes to greater space savings in smartphones and other compact devices

Lower power consumption and smaller size of fan motors applied in communication base stations and industrial equipment with 5.0mm × 6.0mm and 3.3mm × 3.3mm sizes

High-speed, high-quality printing and superior durability contribute to improved efficiency in logistics and inventory management label applications

Santa Clara, CA and Kyoto, Japan, Sept. 27, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced a compact 2.0mm × 1.0mm proximity sensor, the RPR-0720, optimized for applications requiring attachment/detachment and proximity detection.

Program announces products and periods for long-term supply to ensure worry-free adoption in long-lifecycle equipment

Reduces component volume by 99% and power loss by 55% when replacing silicon MOSFETs

Local dimming function contributes to higher resolution and lower power consumption displays

Contributes to lower power loss, along with fewer man-hours and external parts required for noise suppression, in devices equipped with small motors

Contributes to accurate color representation in cabin function/status indicators and accent lighting

Partnership enables capacity assurance for energy-efficient silicon carbide power semiconductors

40V to 150V breakdown voltage lineup, ideal for motor drive and industrial power supplies

Increasing efficiency and miniaturization in a wide range of power supply systems, including servers and AC adapters

PSR lineup will also include 0.2mΩ and 15W class variants in the industry’s smallest size

Santa Clara, CA and Kyoto, Japan, April 25, 2023 (GLOBE NEWSWIRE) -- Kyoto-based ROHM Semiconductor and Semikron Danfoss have been collaborating for more than ten years with regards to the implementation of silicon carbide (SiC) inside power modules. Recently, Semikron Danfoss added ROHM’s new 1200V RGA IGBT to its low power module offering. In doing so, both companies show that they remain committed to serving worldwide motor drive customers’ needs.

Santa Clara, CA and Kyoto, Japan, April 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced mass production technology for Short-Wavelength Infrared (SWIR) devices in the industry's smallest class [1] 1608-size (1.6mm × >0.8mm) for portable / wearable / hearable devices requiring material detection.

Built-in DC and PWM dimming support a wide range of design requirements

Greater energy savings and miniaturization in power supply applications by combining GaN devices and control ICs

Santa Clara, CA and Kyoto, Japan, March 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide (SiC) MOSFETs and SiC Schottky Barrier Diode (SBD) for a new line of power modules. This product family currently includes the three-phase SA310 module, ideal for driving high-voltage BLDC (brushless DC) motors, as well as two half-bridge devices, SA110 and SA111, ideal for a wide range of high-voltage applications.

Wide input voltage range ideal for current sensing applications operating from 12/24V power supplies

Santa Clara, CA and Kyoto, Japan, March 07, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that Murata Power Solutions is using its high performance silicon carbide (SiC) Schottky Barrier Diodes (SBDs) to increase performance and reduce the size of Power Supply Units (PSUs) for data center applications. ROHM’s SCS308AH SiC SBDs feature high surge resistance and short recovery time, enabling high-speed switching.

Maintains power for core functions even in the event of a vehicle system malfunction

Replaces mechanical relays and MOSFETs fulfilling functional safety requirements in automotive and industrial equipment applications

Contributes to smaller mounting area in isolation circuit by 30% compared with standard products

Contributing to longer cruising range and smaller systems in electric vehicles both in Japan and overseas from 2025

Delivering class-leading power dissipation in a compact package ideal for small, thin devices

Lineup also expanded to include two updated general-purpose MCR series shunt resistors

Contributing to the technical innovation of new energy vehicles through the development of automotive SiC power devices

AI at the edge enables real-time failure prediction without cloud server required

Santa Clara, CA and Kyoto, Japan, Nov. 22, 2022 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they have signed a joint development agreement with Mazda Motor Corporation (Mazda) and Imasen Electric Industrial Co., Ltd., (Imasen) for inverters and SiC power modules to be used in the electric drive units of electric vehicles, including e-Axle.

Contributes to improved visibility by reducing uneven brightness and color in indicators and numeric displays

Full-HD compatible products contribute to functional safety through end-to-end data monitoring

Providing one-stop support for implementing wireless charging functions for hearable and wearable devices

Santa Clara, CA and Kyoto, Japan, Oct. 25, 2022 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BUxxJA3DG-C series of automotive-grade LDO regulator ICs (BU12JA3DG-C, BU15JA3DG-C, BU18JA3DG-C, BU25JA3DG-C, BU30JA3DG-C, BU33JA3DG-C). The devices are designed for automotive applications, such as sensors for ADAS (Advanced Driver Assistance Systems) which have become smaller and more powerful.