Articles from Efficient Power Conversion

Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, today announced a comprehensive licensing agreement with Renesas Electronics Corporation, a premier global supplier of advanced semiconductor solutions and high-voltage GaN transistors.

EPC, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 100 V EPC2306 designed for 48 V DC-DC conversion used in high-density computing applications, in 48 V BLDC motor drives for e-mobility and robotics, and in solar optimizers and microinverters, and Class D Audio.

EPC announces the introduction of a 100 V, 35 A integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 APulsed, rad-hard GaN FET in a small 13.9 mm2 footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7018, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family. Packaged versions will be available from EPC Space.

EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7004, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, EPC7018, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family. Packaged versions will be available from EPC Space.

EPC announces the debut of a user community, the “GaN Talk Support Forum” as an environment for engineers to access product and design support and share ideas on the use of gallium nitride (GaN) based power technology. The forum was developed for engineers, engineering students, and all GaN enthusiasts and provides an opportunity for users to submit GaN-related questions and share ideas with the user community. Questions can be searched by topic category, top topics, or latest posts. Beyond submitting questions, users can share past questions and answers from within the forum via a ‘share’ link in the post.

Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 APulsed, rad-hard GaN FET in a small 5.76 mm2 footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.

EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

EPC announces the availability of the EPC9167, a 3-phase BLDC motor drive inverter using the EPC2065 eGaN® FET. The EPC9167 operates from an input supply voltage between 14 V and 60 V (nominal 48 V) and has two configurations – a standard unit and a high current version:

EPC announces the availability of the EPC9165, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 97% peak efficiency in a small footprint. This solution is ideal for high-density and high-power 48 V battery packs such as those required for eMobility and light mobility.

EPC announces the availability of the EPC9170, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 96.8% peak efficiency in a small footprint. The board features the ePower™ 100 V, 65 A integrated circuit chipset. The chipset includes the EPC23101 eGaN® IC plus EPC2302 eGaN® FET for a solution capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

EPC announces the debut of the GaN Power Bench™, a suite of design tools to assist engineers in getting the optimal performance from their GaN-based designs. eGaN® FETs and ICs provide the fast switching, high efficiency and small size that can meet the stringent power density requirements of today’s leading-edge applications. The tools in the GaN Power Bench assist designers in the selection of the best GaN device for the application, simulate and optimize the thermal performance of the design, and provide application examples with all the supporting documentation needed to quickly and easily replicate the optimal design tips necessary for ideal performance.

EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.